MRF7S18170HR3 MRF7S18170HSR3
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 9. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 0
-- 1 0
1 10010
-- 4 0
-- 5 0
-- 3 0
-- 2 0
7th Order
5th Order
3rd Order
Figure 10. Intermodulation Distortion
Products versus Tone Spacing
TWO--TONE SPACING (MHz)
Figure 11. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
30 6045
Actual
Ideal
0
-- 2
-- 4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
Figure 12. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
-- 7 0
-- 2 0
40 4241
-- 3 0
-- 4 0
-- 5 0
-- 6 0
ACPR, UPPER AND LOWER RESULTS (dBc)
43 44 45 46 47
Uncorrected, Upper and Lower
DPD Corrected,
with Memory Correction
400
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 1400 mA
f = 1840 MHz
TC
=--30_C
25_C
85_C
50
-- 3 0_C
25_C
85_C
10
1
18
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
VDD
=28Vdc,IDQ
= 1400 mA, f = 1840 MHz
Single--Carrier W--CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
-- 6 0
1 10010
0
VDD
=28Vdc,Pout
= 170 W (PEP)
IDQ
= 1400 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM3--U
-- 1 0
-- 2 0
-- 4 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
400
VDD
=28Vdc,IDQ
= 1400 mA
f1 = 1835 MHz, f2 = 1845 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
-- 5 0
-- 3 0
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
75
90 120105
100
20
50
45
40
35
30
25
η
D
,
DRAIN EFFICIENCY (%)
VDD
=28Vdc,IDQ
= 1400 mA
f = 1840 MHz, Input PAR = 7.5 dB
--1 dB = 47.811 W
--2 dB = 64.519 W
--3 dB = 84.995 W
17
16
15
14
13
48 49
DPD Corrected, No Memory
Correction
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